Nanoelectronics

Currently our group is working at experimental studying of nanoelectronic devices based on silicon, mostly silicon nanowires and single-electron transistors.  Everyone who comes to work in our group learns with their own hands the same  technological methods as used for creating  modern silicon chips. 

 

Suspended single-electron transistor made up from highly doped silicon on insulator (Laboratory of Cryoelectronics 2012) 

 

 

 

 

 

Single elextron memory cell. A controllable transfer of a single electron (Laboratory of Cryoelectronics 1997)

  • Vladimir A. Krupenin

    Vladimir A. Krupenin

    Senior researcher

    ISTINA
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    P: +7 (495) 939-39-87
  • Denis E. Presnov

    Denis E. Presnov

    Senior researcher

    ISTINA
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    P: +7 (495) 939-39-87
    P2: +7 (495) 939-39-88
    F: +7 (495) 939-30-00
  • Ivan V. Bozhev

    Ivan V. Bozhev

    Ph.D Student
    semiconductors department

    ISTINA
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    P: +7 (903) 587-23-79
  • Alexander Dorofeev

    Alexander Dorofeev

    Student
    Semiconductor division