Sarkis A. Dagesyan

Sarkis A. Dagesyan

Molecular single-electronics
Division of Atomic Physics, Plasma Physics, and Microelectronics
PhD Student, laboratore assistant

E: This email address is being protected from spambots. You need JavaScript enabled to view it.
P: 8 (495) 939-59-35


Presnov D.E., Dagesyan S.A., Bozhev I.V., Shorokhov V.V., Trifonov A.S., Shemukhin A.A., Sapkov I.V., Prokhorova I.G., Snigirev O.V., Krupenin V.A. Single-Electron Structures Based on Solitary Dopant Atoms of Arsenic, Phosphorus, Gold, and Potassium in Silicon. Moscow University Physics Bulletin 74, 2 (2019), 165-170. [ DOI ].

Knyazev G.A., Kapralov P.O., Gusev N.A., Kalish A.N., Vetoshko P.M., Dagesyan S.A., Shaposhnikov A.N., Prokopov A.R., Berzhansky V.N., Zvezdin A.K., Belotelov V.I. Magnetoplasmonic Crystals for Highly Sensitive Magnetometry. ACS Photonics 5, 12 (2018), 4951-4959. [ DOI ].

Dagesyan, S.A., Shorokhov, V.V., Presnov, D.E., Soldatov, E.S., Trifonov, A.S., Krupenin, V.A., and Snigirev, O.V. Single-electron transistor with island formed by several dopant phosphorus atoms. Moscow University Physics Bulletin 72, 5 (2017), 474–479. [ DOI ] .

Дагесян С.А., Шорохов В.В., Преснов Д.Е., Солдатов Е.С., Трифонов А.С., Крупенин В.А., Снигирёв О.В. Одноэлектронный транзистор с островом из нескольких примесных атомов фосфора. Вестник Московского университета. Серия 3: Физика, астрономия, 5 (2017), 32–38. [ DOI ].

Dagesyan, S.A., Shorokhov, V.V., Presnov, D.E., Soldatov, E.S., Trifonov, A.S., and Krupenin, V.A. Sequential reduction of the silicon single-electron transistor structure to atomic scale. Nanotechnology 28 (2017), 225304. [ DOI ].

Dagesyan, S., Stepanov, A., Soldatov, E., and Snigirev, O. Properties of extremely narrow gaps between electrodes of a molecular transistor. Journal of Superconductivity and Novel Magnetism (2014). [ DOI ].

Dagesyan, S., Stepanov, A., Soldatov, E., and Zharik, G. High-temperature single-electron transistor based on a gold nanoparticle. In Proc. of SPIE, the International Society for Optical Engineering (2014), 9440, pp. 94400P–1–94400P–6. [ DOI ].

Дагесян, С., Солдатов, Е., и Степанов, А. Изготовление предельно малых зазоров в металлических нанопроводах и исследование их характеристик. Известия РАН. Серия физическая 78, 2 (2014), 211–215. [ DOI ]

Dagesyan, S., Stepanov, A., and Soldatov, E. Forming extremely small gaps in metal nanowires and studying their properties. Bulletin of the Russian Academy of Sciences 78, 2 (2014), 139–144. [ DOI ].